RFQ for SGR2N60UFD

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SAMSUNG SEMICONDUCTOR INC

Part Description: 2.4 A, 600 V, N-CHANNEL IGBT

Package Description: DPAK-3

Lead Free:

EU RoHS Compliant:

China RoHS Compliant:

Status: ACTIVE-UNCONFIRMED

Series: SGR2N60

Category: Transistor

Type: Insulated Gate BIP Transistor

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